Komatsu, Naoyoshi, Satoh, Tomohisa, Honjo, Masatomo, Futatuki, Takashi, Masumoto, Keiko, Kimura, Chiharu, Aoki, Hidemitsu (2011) Influence of inserting AlN between AlSiON and 4H–SiC interface for the MIS structure. Applied Surface Science, 257. 8307-8310 doi:10.1016/j.apsusc.2011.02.107
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Influence of inserting AlN between AlSiON and 4H–SiC interface for the MIS structure | ||
| Journal | Applied Surface Science | ||
| Authors | Komatsu, Naoyoshi | Author | |
| Satoh, Tomohisa | Author | ||
| Honjo, Masatomo | Author | ||
| Futatuki, Takashi | Author | ||
| Masumoto, Keiko | Author | ||
| Kimura, Chiharu | Author | ||
| Aoki, Hidemitsu | Author | ||
| Year | 2011 (August) | Volume | 257 |
| Publisher | Elsevier BV | ||
| DOI | doi:10.1016/j.apsusc.2011.02.107Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 9916369 | Long-form Identifier | mindat:1:5:9916369:9 |
| GUID | 0 | ||
| Full Reference | Komatsu, Naoyoshi, Satoh, Tomohisa, Honjo, Masatomo, Futatuki, Takashi, Masumoto, Keiko, Kimura, Chiharu, Aoki, Hidemitsu (2011) Influence of inserting AlN between AlSiON and 4H–SiC interface for the MIS structure. Applied Surface Science, 257. 8307-8310 doi:10.1016/j.apsusc.2011.02.107 | ||
| Plain Text | Komatsu, Naoyoshi, Satoh, Tomohisa, Honjo, Masatomo, Futatuki, Takashi, Masumoto, Keiko, Kimura, Chiharu, Aoki, Hidemitsu (2011) Influence of inserting AlN between AlSiON and 4H–SiC interface for the MIS structure. Applied Surface Science, 257. 8307-8310 doi:10.1016/j.apsusc.2011.02.107 | ||
| In | (n.d.) Applied Surface Science Vol. 257. Elsevier BV | ||
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